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FILTERED COMPONENT SELECTION

FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPI25N06S3-25 Infineon Technologies

IPI25N06S3-25

MOSFET N-CH 55V 25A TO262-3

Infineon Technologies

9,049
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 25A (Tc) 10V 25.1mOhm @ 15A, 10V 4V @ 20µA 41 nC @ 10 V ±20V 1862 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI25N06S3L-22 Infineon Technologies

IPI25N06S3L-22

MOSFET N-CH 55V 25A TO262-3

Infineon Technologies

9,158
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 25A (Tc) 5V, 10V 21.6mOhm @ 17A, 10V 2.2V @ 20µA 47 nC @ 10 V ±16V 2260 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI60R199CPXKSA1 Infineon Technologies

IPI60R199CPXKSA1

MOSFET N-CH 600V 16A TO262-3

Infineon Technologies

8,641
Datasheet CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 660µA 43 nC @ 10 V ±20V 1520 pF @ 100 V - 139W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
IPI80N06S3-05 Infineon Technologies

IPI80N06S3-05

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies

5,735
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 5.4mOhm @ 63A, 10V 4V @ 110µA 240 nC @ 10 V ±20V 10760 pF @ 25 V - 165W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI80N06S3-07 Infineon Technologies

IPI80N06S3-07

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies

8,750
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 6.8mOhm @ 51A, 10V 4V @ 80µA 170 nC @ 10 V ±20V 7768 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI80N06S3L06XK Infineon Technologies

IPI80N06S3L06XK

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies

8,545
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 5V, 10V 5.9mOhm @ 56A, 10V 2.2V @ 80µA 196 nC @ 10 V ±16V 9417 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI80N06S3L-08 Infineon Technologies

IPI80N06S3L-08

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies

6,476
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 5V, 10V 7.9mOhm @ 43A, 10V 2.2V @ 55µA 134 nC @ 10 V ±16V 6475 pF @ 25 V - 105W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPP03N03LB G Infineon Technologies

IPP03N03LB G

MOSFET N-CH 30V 80A TO220-3

Infineon Technologies

4,746
Datasheet OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.1mOhm @ 55A, 10V 2V @ 100µA 59 nC @ 5 V ±20V 7624 pF @ 15 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP048N06L G Infineon Technologies

IPP048N06L G

MOSFET N-CH 60V 100A TO220-3

Infineon Technologies

2,304
Datasheet OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 4.7mOhm @ 100A, 10V 2V @ 270µA 225 nC @ 10 V ±20V 7600 pF @ 30 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP04N03LB G Infineon Technologies

IPP04N03LB G

MOSFET N-CH 30V 80A TO220-3

Infineon Technologies

3,283
Datasheet OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.8mOhm @ 55A, 10V 2V @ 70µA 40 nC @ 5 V ±20V 5203 pF @ 15 V - 107W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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