FETs, MOSFETs
Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.
If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IMBG65R048M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- |
865 |
|
Datasheet | CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 45A (Tc) | 18V | 64mOhm @ 20.1A, 18V | 5.7V @ 6mA | 33 nC @ 18 V | +23V, -5V | 1118 pF @ 400 V | - | 183W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-12 |
|
SPW35N60CFDFKSA1MOSFET N-CH 600V 34.1A TO247-3 |
240 |
|
Datasheet | CoolMOS™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 34.1A (Tc) | 10V | 118mOhm @ 21.6A, 10V | 5V @ 1.9mA | 212 nC @ 10 V | ±20V | 5060 pF @ 25 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
|
IMZA65R048M1HXKSA1MOSFET 650V NCH SIC TRENCH |
420 |
|
Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 39A (Tc) | 18V | 64mOhm @ 20.1A, 18V | 5.7V @ 6mA | 33 nC @ 18 V | +23V, -5V | 1118 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4-3 |
|
IPW65R048CFDAFKSA1MOSFET N-CH 650V 63.3A TO247-3 |
284 |
|
Datasheet | CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 63.3A (Tc) | 10V | 48mOhm @ 29.4A, 10V | 4.5V @ 2.9mA | 270 nC @ 10 V | ±20V | 7440 pF @ 100 V | - | 500W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3 |
|
IPW65R029CFD7XKSA1MOSFET N-CH 650V 69A TO247-3 |
154 |
|
Datasheet | CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 69A (Tc) | - | 29mOhm @ 35.8A, 10V | 4.5V @ 1.79mA | 145 nC @ 10 V | ±20V | 7149 pF @ 400 V | - | 305W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
|
|
IPW65R041CFDFKSA2MOSFET N-CH 650V 68.5A TO247-3 |
611 |
|
Datasheet | CoolMOS™ CFD2 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 68.5A (Tc) | 10V | 41mOhm @ 33.1A, 10V | 4.5V @ 3.3mA | 300 nC @ 10 V | ±20V | 8400 pF @ 100 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
|
|
IMBG65R030M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- |
924 |
|
Datasheet | CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 63A (Tc) | 18V | 42mOhm @ 29.5A, 18V | 5.7V @ 8.8mA | 49 nC @ 18 V | +23V, -5V | 1643 pF @ 400 V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-12 |
|
IPZ65R019C7XKSA1MOSFET N-CH 650V 75A TO247-4 |
1,153 |
|
Datasheet | CoolMOS™ C7 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 19mOhm @ 58.3A, 10V | 4V @ 2.92mA | 215 nC @ 10 V | ±20V | 9900 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4 |
|
BSD316SNH6327XTSA1MOSFET N-CH 30V 1.4A SOT363-6 |
5,735 |
|
Datasheet | OptiMOS™ | 6-VSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.4A (Ta) | 4.5V, 10V | 160mOhm @ 1.4A, 10V | 2V @ 3.7µA | 0.6 nC @ 5 V | ±20V | 94 pF @ 15 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT363-PO |
|
IPP80R900P7XKSA1MOSFET N-CH 800V 6A TO220-3 |
8,619 |
|
Datasheet | CoolMOS™ P7 | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 900mOhm @ 2.2A, 10V | 3.5V @ 110µA | 15 nC @ 10 V | ±20V | 350 pF @ 500 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
Frequently Asked Questions
What are FETs, MOSFETs components used for?
FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right FETs, MOSFETs part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
How can I request pricing and availability?
Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.
