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FILTERED COMPONENT SELECTION

FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRFSL59N10D Infineon Technologies

IRFSL59N10D

MOSFET N-CH 100V 59A TO262

Infineon Technologies

9,094
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 25mOhm @ 35.4A, 10V 5.5V @ 250µA 114 nC @ 10 V ±30V 2450 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
BTS113AE3045ANTMA1 Infineon Technologies

BTS113AE3045ANTMA1

MOSFET N-CH 60V 11.5A TO220AB

Infineon Technologies

5,535
Datasheet TEMPFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 11.5A (Tc) 4.5V 170mOhm @ 5.8A, 4.5V 2.5V @ 1mA - ±10V 560 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-220AB
BSC016N04LSGATMA1 Infineon Technologies

BSC016N04LSGATMA1

MOSFET N-CH 40V 31A/100A TDSON

Infineon Technologies

8,181
Datasheet OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 31A (Ta), 100A (Tc) 4.5V, 10V 1.6mOhm @ 50A, 10V 2V @ 85µA 150 nC @ 10 V ±20V 12000 pF @ 20 V - 2.5W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-1
IPD90P03P404ATMA1 Infineon Technologies

IPD90P03P404ATMA1

MOSFET P-CH 30V 90A TO252-3

Infineon Technologies

5,233
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 10V 4.5mOhm @ 90A, 10V 4V @ 253µA 130 nC @ 10 V ±20V 10300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IRF1404STRR Infineon Technologies

IRF1404STRR

MOSFET N-CH 40V 162A D2PAK

Infineon Technologies

5,202
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 162A (Tc) 10V 4mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRF1405STRR Infineon Technologies

IRF1405STRR

MOSFET N-CH 55V 131A D2PAK

Infineon Technologies

2,769
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 131A (Tc) 10V 5.3mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRFB23N20D Infineon Technologies

IRFB23N20D

MOSFET N-CH 200V 24A TO220AB

Infineon Technologies

8,371
Datasheet HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 100mOhm @ 14A, 10V 5.5V @ 250µA 86 nC @ 10 V ±30V 1960 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRL2910L Infineon Technologies

IRL2910L

MOSFET N-CH 100V 55A TO262

Infineon Technologies

7,195
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) 4V, 10V 26mOhm @ 29A, 10V 2V @ 250µA 140 nC @ 5 V ±16V 3700 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRL3103D2PBF Infineon Technologies

IRL3103D2PBF

MOSFET N-CH 30V 54A TO220AB

Infineon Technologies

8,865
Datasheet FETKY™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 54A (Tc) 4.5V, 10V 14mOhm @ 32A, 10V 1V @ 250µA 44 nC @ 4.5 V ±16V 2300 pF @ 25 V - 2W (Ta), 70W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IPB025N10N3GE8187ATMA1 Infineon Technologies

IPB025N10N3GE8187ATMA1

MOSFET N-CH 100V 180A TO263-7

Infineon Technologies

4,740
Datasheet OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 6V, 10V 2.5mOhm @ 100A, 10V 3.5V @ 275µA 206 nC @ 10 V ±20V 14800 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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