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FILTERED COMPONENT SELECTION

FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRF2805STRRPBF Infineon Technologies

IRF2805STRRPBF

MOSFET N-CH 55V 135A D2PAK

Infineon Technologies

9,445
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 135A (Tc) 10V 4.7mOhm @ 104A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 5110 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRFSL4410ZPBF Infineon Technologies

IRFSL4410ZPBF

MOSFET N-CH 100V 97A TO262

Infineon Technologies

6,786
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 97A (Tc) 10V 9mOhm @ 58A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4820 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRFU2905Z Infineon Technologies

IRFU2905Z

MOSFET N-CH 55V 42A IPAK

Infineon Technologies

9,566
Datasheet HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 14.5mOhm @ 36A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1380 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK (TO-251AA)
SPB100N03S2-03 G Infineon Technologies

SPB100N03S2-03 G

MOSFET N-CH 30V 100A TO263-3

Infineon Technologies

9,469
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 10V 3mOhm @ 80A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 7020 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
IPI100P03P3L-04 Infineon Technologies

IPI100P03P3L-04

MOSFET P-CH 30V 100A TO262-3

Infineon Technologies

4,243
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 4.3mOhm @ 80A, 10V 2.1V @ 475µA 200 nC @ 10 V +5V, -16V 9300 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IRF540ZSTRL Infineon Technologies

IRF540ZSTRL

MOSFET N-CH 100V 36A D2PAK

Infineon Technologies

3,841
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 10V 26.5mOhm @ 22A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1770 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRF3709 Infineon Technologies

IRF3709

MOSFET N-CH 30V 90A TO220AB

Infineon Technologies

4,654
Datasheet HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRLB4030PBFXKMA1 Infineon Technologies

IRLB4030PBFXKMA1

TRENCH >=100V

Infineon Technologies

8,762
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 4.5V, 10V 4.3mOhm @ 110A, 10V 2.5V @ 250µA 130 nC @ 4.5 V ±16V 11360 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IPB80P04P405ATMA1 Infineon Technologies

IPB80P04P405ATMA1

MOSFET P-CH 40V 80A TO263-3

Infineon Technologies

3,849
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4.9mOhm @ 80A, 10V 4V @ 250µA 151 nC @ 10 V ±20V 10300 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3-2
IPB80P04P4L04ATMA1 Infineon Technologies

IPB80P04P4L04ATMA1

MOSFET P-CH 40V 80A TO263-3

Infineon Technologies

6,961
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 4.4mOhm @ 80A, 10V 2.2V @ 250µA 176 nC @ 10 V ±16V 3800 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3-2
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

PART MATCHING & SOURCING

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