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FILTERED COMPONENT SELECTION

FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
BSC030N10NS5SCATMA1 Infineon Technologies

BSC030N10NS5SCATMA1

TRENCH >=100V

Infineon Technologies

90
Datasheet OptiMOS™ 5 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 171A (Tc) 6V, 10V 3mOhm @ 50A, 10V 3.8V @ 115µA 88 nC @ 10 V ±20V 6500 pF @ 50 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WSON-8-2
IAUT300N08S5N014ATMA1 Infineon Technologies

IAUT300N08S5N014ATMA1

MOSFET N-CH 80V 300A 8HSOF

Infineon Technologies

71
Datasheet OptiMOS™ 5 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 300A (DC) 6V, 10V 1.4mOhm @ 100A, 10V 3.8V @ 230µA 187 nC @ 10 V ±20V 13178 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-1
IPP030N10N3GXKSA1 Infineon Technologies

IPP030N10N3GXKSA1

MOSFET N-CH 100V 100A TO220-3

Infineon Technologies

45
Datasheet OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 3mOhm @ 100A, 10V 3.5V @ 275µA 206 nC @ 10 V ±20V 14800 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IMZ120R030M1HXKSA1 Infineon Technologies

IMZ120R030M1HXKSA1

SICFET N-CH 1.2KV 56A TO247-4

Infineon Technologies

88
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 56A (Tc) 15V, 18V 40mOhm @ 25A, 18V 5.7V @ 10mA 63 nC @ 18 V +23V, -7V 2120 pF @ 800 V - 227W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-1
IMBG120R012M2HXTMA1 Infineon Technologies

IMBG120R012M2HXTMA1

SIC DISCRETE

Infineon Technologies

31
Datasheet CoolSiC™ Gen 2 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 144A (Tc) 15V, 18V 12.2mOhm @ 56.7A, 18V 5.1V @ 17.8mA 124 nC @ 18 V +23V, -10V 4050 pF @ 800 V - 600W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-12
AIMBG120R010M1XTMA1 Infineon Technologies

AIMBG120R010M1XTMA1

SIC_DISCRETE

Infineon Technologies

13
Datasheet CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 187A - - - - - - - - -55°C ~ 175°C - - Surface Mount PG-TO263-7-12
IMW120R007M1HXKSA1 Infineon Technologies

IMW120R007M1HXKSA1

SIC DISCRETE

Infineon Technologies

88
Datasheet CoolSiC™ TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 225A (Tc) 15V, 18V 9.9mOhm @ 108A, 18V 5.2V @ 47mA 289 nC @ 18 V +20V, -5V 9170 pF @ 800 V - 750W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3
IPD031N03LGATMA1 Infineon Technologies

IPD031N03LGATMA1

MOSFET N-CH 30V 90A TO252-3

Infineon Technologies

822
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 3.1mOhm @ 30A, 10V 2.2V @ 250µA 51 nC @ 10 V ±20V 5300 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
BSP135IXTSA1 Infineon Technologies

BSP135IXTSA1

MOSFET N-CH 600V 120MA SOT223-4

Infineon Technologies

1,023
Datasheet - TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 600 V 120mA (Ta) 0V, 10V 45Ohm @ 120mA, 10V 1V @ 94µA 3.7 nC @ 5 V ±20V 98 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223-4
ISP12DP06NMXTSA1 Infineon Technologies

ISP12DP06NMXTSA1

MOSFET P-CH 60V 2.8A SOT223-4

Infineon Technologies

1,060
Datasheet OptiMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 2.8A (Ta) 10V 125mOhm @ 2.8A, 10V 4V @ 520µA 20.2 nC @ 10 V ±20V 790 pF @ 30 V - 1.8W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223-4
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

PART MATCHING & SOURCING

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