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FILTERED COMPONENT SELECTION

FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SPB02N60C3ATMA1 Infineon Technologies

SPB02N60C3ATMA1

MOSFET N-CH 650V 1.8A TO263-3

Infineon Technologies

7,576
Datasheet CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V 3.9V @ 80µA 12.5 nC @ 10 V ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3-2
IPP65R600C6XKSA1 Infineon Technologies

IPP65R600C6XKSA1

MOSFET N-CH 650V 7.3A TO220-3

Infineon Technologies

6,284
Datasheet CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPD50N04S309ATMA1 Infineon Technologies

IPD50N04S309ATMA1

MOSFET N-CH 40V 50A TO252-3

Infineon Technologies

2,338
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 9mOhm @ 50A, 10V 4V @ 28µA 26 nC @ 10 V ±20V 1750 pF @ 25 V - 63W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IPP65R600E6XKSA1 Infineon Technologies

IPP65R600E6XKSA1

MOSFET N-CH 650V 7.3A TO220-3

Infineon Technologies

9,859
Datasheet CoolMOS™ TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
SPS04N60C3BKMA1 Infineon Technologies

SPS04N60C3BKMA1

MOSFET N-CH 650V 4.5A TO251-3

Infineon Technologies

5,915
Datasheet CoolMOS™ TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 3.9V @ 200µA 25 nC @ 10 V ±20V 490 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-11
IPS60R280PFD7SAKMA1 Infineon Technologies

IPS60R280PFD7SAKMA1

CONSUMER PG-TO251-3

Infineon Technologies

5,835
Datasheet CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 280mOhm @ 3.6A, 10V 4.5V @ 180µA 15.3 nC @ 10 V ±20V 656 pF @ 400 V - 51W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
IPD60R380E6ATMA2 Infineon Technologies

IPD60R380E6ATMA2

MOSFET N-CH 600V 10.6A TO252-3

Infineon Technologies

7,029
Datasheet CoolMOS™ E6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 300µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
SPP04N60S5 Infineon Technologies

SPP04N60S5

N-CHANNEL POWER MOSFET

Infineon Technologies

41,600
Datasheet CoolMOS™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 5.5V @ 200µA 22.9 nC @ 10 V ±20V 580 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
IPD60R600CP Infineon Technologies

IPD60R600CP

N-CHANNEL POWER MOSFET

Infineon Technologies

4,945
Datasheet CoolMOS™ CP TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 6.1A (Tc) 10V 600mOhm @ 3.3A, 10V 3.5V @ 220µA 27 nC @ 10 V ±20V 550 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3-313
IPI70N10S3L12AKSA1 Infineon Technologies

IPI70N10S3L12AKSA1

MOSFET N-CH 100V 70A TO262-3

Infineon Technologies

3,088
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 4.5V, 10V 12.1mOhm @ 70A, 10V 2.4V @ 83µA 80 nC @ 10 V ±20V 5550 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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