JIEXIN Electronics — Your one-stop global supplier of chips and electronic components.
FILTERED COMPONENT SELECTION

FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
G700P06D3 Goford Semiconductor

G700P06D3

P-60V,-18A,RD(MAX)<70M@-10V,VTH-

Goford Semiconductor

770
Datasheet G 8-PowerVDFN Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 4.5V, 10V 70mOhm @ 4A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 1446 pF @ 30 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G900P15T Goford Semiconductor

G900P15T

MOSFET P-CH 150V 60A TO-220

Goford Semiconductor

1,000
Datasheet TrenchFET® TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) - 60A (Tc) 10V 80mOhm @ 5A, 10V 4V @ 250µA - ±20V - - 100W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
G700P06J Goford Semiconductor

G700P06J

P-60V,-23A,RD(MAX)<70M@-10V,VTH-

Goford Semiconductor

30
Datasheet TrenchFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Active P-Channel MOSFET (Metal Oxide) 60 V 23A (Tc) 4.5V, 10V 70mOhm @ 6A, 10V 3V @ 250µA 23 nC @ 10 V ±20V 1465 pF @ 30 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-251
G700P06T Goford Semiconductor

G700P06T

P-60V,25A,RD<70M@-10V,VTH1V~-2.5

Goford Semiconductor

97
Datasheet TrenchFET® TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 60 V 25A (Tc) 4.5V, 10V 70mOhm @ 4A, 10V 2.5V @ 250µA 23 nC @ 10 V ±20V 1428 pF @ 30 V - 100W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
G2K2P10D3E Goford Semiconductor

G2K2P10D3E

MOSFET P-CH ESD 100V 10A DFN3*3-

Goford Semiconductor

352
Datasheet TrenchFET® 8-PowerVDFN Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4.5V, 10V 210mOhm @ -6A, -10V 2.5V @ 250µA 33 nC @ 10 V ±20V 1668 pF @ 50 V - 31W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
5N20A Goford Semiconductor

5N20A

N200V,RD(MAX)<650M@10V,VTH1V~3V,

Goford Semiconductor

747
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 200 V 5A (Tc) 10V 580mOhm @ 2.5A, 10V 3V @ 250µA 11 nC @ 10 V ±20V 247 pF @ 25 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G630J Goford Semiconductor

G630J

N200V, 9A,RD<0.28@10V,VTH1.0V~3.

Goford Semiconductor

140
Datasheet TrenchFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 250mOhm @ 4.5A, 10V 3V @ 250µA 12 nC @ 10 V ±20V 515 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251
G400P06T Goford Semiconductor

G400P06T

P-60V,-32A,RD(MAX)<40M@-10V,VTH-

Goford Semiconductor

64
Datasheet TrenchFET® TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 60 V 32A (Tc) 10V 40mOhm @ 12A, 10V 3V @ 250µA 46 nC @ 10 V ±20V 2598 pF @ 30 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
G60N06T Goford Semiconductor

G60N06T

N60V, 50A,RD<17M@10V,VTH1.0V~2.0

Goford Semiconductor

53
Datasheet TrenchFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 17mOhm @ 5A, 10V 2V @ 250µA 39 nC @ 10 V ±20V 2333 pF @ 30 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
G58N06F Goford Semiconductor

G58N06F

N60V, 35A,RD<13M@10V,VTH1.0V~2.4

Goford Semiconductor

100
Datasheet TrenchFET® TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 60 V 35A (Tc) 4.5V, 10V 13mOhm @ 30A, 10V 2.4V @ 250µA 75 nC @ 10 V ±20V 30006 pF @ 30 V - 44W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
Total 638 Record«Prev1... 4950515253545556...64Next»
FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

PART MATCHING & SOURCING

Need Help Narrowing Down the Right FETs, MOSFETs Part?

Send your target specifications, preferred manufacturer, quantity or reference part number. Our team can help check matching options, availability and quotation details for your sourcing requirement.

BOM BOM Phone +86-138 0989 9356 Email info@jx-icsource.com Cart Shopping Cart Account My Account Back To Top