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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
G3F45MT06J-TR GeneSiC Semiconductor

G3F45MT06J-TR

650V 40M TO-263-7 G3F SIC MOSFET

GeneSiC Semiconductor

800
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 56A (Tc) 15V, 18V 54mOhm @ 20A, 18V 4.3V @ 8mA 55 nC @ 18 V +22V, -10V 1640 pF @ 400 V - 187W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
G3F65MT12J-TR GeneSiC Semiconductor

G3F65MT12J-TR

1200V 65M TO-263-7 G3F SIC MOSFE

GeneSiC Semiconductor

800
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 37A (Tc) 18V 86mOhm @ 15A, 18V 4.3V @ 10mA 55 nC @ 18 V +22V, -10V 1298 pF @ 800 V - 171W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
G3F65MT12K GeneSiC Semiconductor

G3F65MT12K

1200V 65M TO-247-4 G3F SIC MOSFE

GeneSiC Semiconductor

600
Datasheet - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 35A (Tc) 18V 86mOhm @ 15A, 18V 4.3V @ 10mA 55 nC @ 18 V +22V, -10V 1298 pF @ 800 V - 153W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
G3F45MT06D GeneSiC Semiconductor

G3F45MT06D

650V 40M TO-247-3 G3F SIC MOSFET

GeneSiC Semiconductor

600
Datasheet - TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V - - - - - - - - - - - - Through Hole TO-247-3
G3F33MT06J-TR GeneSiC Semiconductor

G3F33MT06J-TR

650V 27M TO-263-7 G3F SIC MOSFET

GeneSiC Semiconductor

800
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 80A (Tc) 15V, 18V 38mOhm @ 26A, 18V 4.3V @ 12mA 81 nC @ 18 V +22V, -10V 2394 pF @ 400 V - 261W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
G3F45MT06K GeneSiC Semiconductor

G3F45MT06K

650V 40M TO-247-4 G3F SIC MOSFET

GeneSiC Semiconductor

600
Datasheet - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 52A (Tc) 15V, 18V 54mOhm @ 20A, 18V 4.3V @ 8mA 55 nC @ 18 V +22V, -10V 1640 pF @ 400 V - 167W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
G3F40MT12J-TR GeneSiC Semiconductor

G3F40MT12J-TR

1200V 40M TO-263-7 G3F SIC MOSFE

GeneSiC Semiconductor

800
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 59A (Tc) 18V 53mOhm @ 20A, 18V 4.3V @ 16mA 86 nC @ 18 V +22V, -10V 2023 pF @ 800 V - 270W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
G3F40MT12K GeneSiC Semiconductor

G3F40MT12K

1200V 40M TO-247-4 G3F SIC MOSFE

GeneSiC Semiconductor

552
Datasheet - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 55A (Tc) 18V 53mOhm @ 20A, 18V 4.3V @ 16mA 86 nC @ 18 V +22V, -10V 2023 pF @ 800 V - 234W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
G3F33MT06K GeneSiC Semiconductor

G3F33MT06K

650V 27M TO-247-4 G3F SIC MOSFET

GeneSiC Semiconductor

600
Datasheet - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 74A (Tc) 15V, 18V 38mOhm @ 26A, 18V 4.3V @ 12mA 81 nC @ 18 V +22V, -10V 2394 pF @ 400 V - 227W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
G3R40MT12J-TR GeneSiC Semiconductor

G3R40MT12J-TR

1200V 40M TO-263-7 G3R SIC MOSFE

GeneSiC Semiconductor

630
Datasheet G3R™, LoRing™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 66A (Tc) 15V, 18V 45mOhm @ 35A, 18V 2.7V @ 18mA 88 nC @ 15 V +22V, -10V 2897 pF @ 800 V - 330W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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