FET, MOSFET Arrays

Explore FET, MOSFET Arrays parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRF7328TRPBF MOSFET 2P-CH 30V 8A 8SO Infineon Technologies	5,840	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Logic Level Gate	30V	8A	21mOhm @ 8A, 10V	2.5V @ 250µA	78nC @ 10V	2675pF @ 25V	2W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
HT8KB6TB1 MOSFET 2N-CH 40V 8A 8HSMT Rohm Semiconductor	6,890	RFQ	Datasheet	-	8-PowerVDFN	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel	-	40V	8A (Ta), 15A (Tc)	17.2mOhm @ 8A, 10V	2.5V @ 1mA	10.6nC @ 10V	530pF @ 20V	2W (Ta), 14W (Tc)	150°C (TJ)	-	-	Surface Mount	8-HSMT (3.2x3)
IQE220N15NM5SCATMA1 MOSFET 2N-CH 150V 8WHSON Infineon Technologies	6,934	RFQ	Datasheet	OptiMOS™	8-PowerWDFN	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	-	150V	-	-	-	-	-	-	-	-	-	Surface Mount	PG-WHSON-8-1
FAM65CR51ADZ1 MOSFET 2N-CH 650V 41A APMCD-B16 onsemi	3,999	RFQ	Datasheet	-	12-SSIP Exposed Pad, Formed Leads	Tube	Active	Silicon Carbide (SiC)	2 N-Channel	-	650V	41A (Tc)	51mOhm @ 20A, 10V	5V @ 3.3mA	123nC @ 10V	4864pF @ 400V	189W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Through Hole	APMCD-B16
NVXK2TR80WDT MOSFET 4N-CH 1200V 20A APM32 onsemi	5,193	RFQ	Datasheet	-	32-PowerDIP Module (1.311", 33.30mm)	Tube	Active	Silicon Carbide (SiC)	4 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	20A (Tc)	116mOhm @ 20A, 20V	4.3V @ 5mA	56nC @ 20V	1154pF @ 800V	82W (Tc)	-40°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	APM32
NVXK2VR80WXT2 MOSFET 6N-CH 1200V 31A APM32 onsemi	3,969	RFQ	Datasheet	-	32-PowerDIP Module (1.449", 36.80mm)	Tube	Active	Silicon Carbide (SiC)	6 N-Channel (3-Phase Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	31A (Tc)	116mOhm @ 20A, 20V	4.3V @ 5mA	56nC @ 20V	1154pF @ 800V	208W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	APM32
NVXK2PR80WXT2 MOSFET 4N-CH 1200V 31A APM32 onsemi	2,267	RFQ	Datasheet	-	32-PowerDIP Module (1.449", 36.80mm)	Tube	Active	Silicon Carbide (SiC)	4 N-Channel (Full Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	31A (Tc)	116mOhm @ 20A, 20V	4.3V @ 5mA	56nC @ 20V	1154pF @ 800V	208W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	APM32
M1P45M12W2-1LA MOSFET 6N-CH 1200V ACEPACK DMT STMicroelectronics	5,427	RFQ	Datasheet	ECOPACK®	32-PowerDIP Module (1.264", 32.10mm)	Tube	Active	Silicon Carbide (SiC)	6 N-Channel (Phase Leg)	Silicon Carbide (SiC)	1200V (1.2kV)	30A (Tc)	60.5mOhm @ 20A, 18V	5V @ 1mA	100nC @ 18V	2086pF @ 800V	-	-40°C ~ 175°C (TJ)	-	-	Through Hole	ACEPACK DMT-32
NVXK2VR80WDT2 MOSFET 6N-CH 1200V 20A APM32 onsemi	2,337	RFQ	Datasheet	-	32-PowerDIP Module (1.449", 36.80mm)	Tube	Active	Silicon Carbide (SiC)	6 N-Channel (3-Phase Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	20A (Tc)	116mOhm @ 20A, 20V	4.3V @ 5mA	56nC @ 20V	1154pF @ 800V	82W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	APM32
M1F80M12W2-1LA AUTOMOTIVE-GRADE ACEPACK DMT-32 STMicroelectronics	9,403	RFQ	Datasheet	*	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NXH040F120MNF1PG MOSFET 4N-CH 1200V 30A 22PIM onsemi	6,006	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	4 N-Channel	-	1200V (1.2kV)	30A (Tc)	56mOhm @ 25A, 20V	4.3V @ 10mA	122.1nC @ 20V	1505pF @ 800V	74W (Tj)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	22-PIM (33.8x42.5)
MSCSM120AM50T1AG MOSFET 2N-CH 1200V 55A Microchip Technology	7,822	RFQ	Datasheet	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	-	1200V (1.2kV)	55A (Tc)	50mOhm @ 40A, 20V	2.7V @ 1mA	137nC @ 20V	1990pF @ 1000V	245W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
NXH010P90MNF1PG MOSFET 2N-CH 900V 154A onsemi	3,091	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Dual) Common Source	-	900V	154A (Tc)	14mOhm @ 100A, 15V	4.3V @ 40mA	546.4nC @ 15V	7007pF @ 450V	328W (Tj)	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	-
NXH010P120MNF1PG MOSFET 2N-CH 1200V 114A onsemi	5,990	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Dual) Common Source	-	1200V (1.2kV)	114A (Tc)	14mOhm @ 100A, 20V	4.3V @ 40mA	454nC @ 20V	4707pF @ 800V	250W (Tj)	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	-
NXH020P120MNF1PG MOSFET 2N-CH 1200V 51A onsemi	2,676	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Dual) Common Source	-	1200V (1.2kV)	51A (Tc)	30mOhm @ 50A, 20V	4.3V @ 20mA	213.5nC @ 20V	2420pF @ 800V	119W (Tj)	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	-
NXH006P120M3F2PTHG MOSFET 2N-CH 1200V 191A 36PIM onsemi	1	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	191A (Tc)	8mOhm @ 100A, 18V	4.4V @ 80mA	622nC @ 20V	11914pF @ 800V	556W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	36-PIM (56.7x62.8)
A2U8M12W3-FC MOSFET 4N-CH 750V/1.2KV 180A STMicroelectronics	9,411	RFQ	Datasheet	ECOPACK®	Module	Bulk	Active	Silicon Carbide (SiC)	4 N-Channel (Three Level Inverter)	Silicon Carbide (SiC)	750V, 1.2kV	180A, 140A	8mOhm @ 100A, 18V, 12.5mOhm @ 100A, 18V	4.2V @ 2mA, 4V @ 2mA	288nC @ 18V, 304nC @ 18V	7660pF @ 400V, 7370pF @ 800V	-	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	-
CAB011A12GM3 MOSFET 2N-CH 1200V 141A MODULE Wolfspeed, Inc.	5,026	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	141A (Tj)	13.9mOhm @ 150A, 15V	3.9V @ 34mA	354nC @ 15V	11000pF @ 1000V	10mW	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module
CAB008A12GM3T MOSFET 2N-CH 1200V 182A MODULE Wolfspeed, Inc.	1	RFQ	Datasheet	-	Module	Box	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	182A (Tj)	10.4mOhm @ 150A, 15V	3.6V @ 46mA	472nC @ 15V	13600pF @ 800V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module
BSM300D12P4G101 MOSFET 2N-CH 1200V 291A MODULE Rohm Semiconductor	2,899	RFQ	Datasheet	-	Module	Box	Active	Silicon Carbide (SiC)	2 N-Channel	-	1200V (1.2kV)	291A (Tc)	-	4.8V @ 145.6mA	-	30000pF @ 10V	925W (Tc)	175°C (TJ)	-	-	Chassis Mount	Module

FAQ

Frequently Asked Questions

What are FET, MOSFET Arrays components used for?

FET, MOSFET Arrays components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

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