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FET, MOSFET Arrays

Explore FET, MOSFET Arrays parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
DMT47M2LDVQ-13 Diodes Incorporated

DMT47M2LDVQ-13

MOSFET 2N-CH 40V 11.9A PWRDI3333

Diodes Incorporated

30
Datasheet - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 11.9A (Ta), 30.2A (Tc) 10.8mOhm @ 20A, 10V 2.3V @ 250µA 14nC @ 10V 891pF @ 20V 2.34W (Ta), 14.8W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI3333-8 (Type UXC)
CSD85301Q2T Texas Instruments

CSD85301Q2T

MOSFET 2N-CH 20V 5A 6WSON

Texas Instruments

1,024
Datasheet NexFET™ 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 5V Drive 20V 5A 27mOhm @ 5A, 4.5V 1.2V @ 250µA 5.4nC @ 4.5V 469pF @ 10V 2.3W -55°C ~ 150°C (TJ) - - Surface Mount 6-WSON (2x2)
SQJQ904E-T1_GE3 Vishay Siliconix

SQJQ904E-T1_GE3

MOSFET 2N-CH 40V 100A PPAK8X8

Vishay Siliconix

79
Datasheet TrenchFET® PowerPAK® 8 x 8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 100A (Tc) 3.4mOhm @ 20A, 10V 3.5V @ 250µA 75nC @ 10V 5900pF @ 20V 75W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® 8 x 8 Dual
ALD1115PAL Advanced Linear Devices Inc.

ALD1115PAL

MOSFET N/P-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

50
Datasheet - 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) N and P-Channel Complementary - 10.6V - 1800Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD1103PBL Advanced Linear Devices Inc.

ALD1103PBL

MOSFET 2N/2P-CH 10.6V 14PDIP

Advanced Linear Devices Inc.

37
Datasheet - 14-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N and 2 P-Channel Matched Pair - 10.6V 40mA, 16mA 75Ohm @ 5V 1V @ 10µA - 10pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 14-PDIP
NVXK2VR40WXT2 onsemi

NVXK2VR40WXT2

MOSFET 6N-CH 1200V 55A APM32

onsemi

14
Datasheet - 32-PowerDIP Module (1.449", 36.80mm) Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 55A (Tc) 59mOhm @ 35A, 20V 4.3V @ 10mA 106nC @ 20V 1789pF @ 800V 319W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
FF17MR12W1M1HB11BPSA1 Infineon Technologies

FF17MR12W1M1HB11BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

13
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
FS33MR12W1M1HB11BPSA1 Infineon Technologies

FS33MR12W1M1HB11BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

3
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
FF8MR12W1M1HS4PB11BPSA1 Infineon Technologies

FF8MR12W1M1HS4PB11BPSA1

MOSFET 2N-CH 1200V AG-EASY1B

Infineon Technologies

4
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 100A (Tj) 8.1mOhm @ 100A, 18V 5.15V @ 40mA 297nC @ 18V 8800pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1B
F3L8MR12W2M1HPB11BPSA1 Infineon Technologies

F3L8MR12W2M1HPB11BPSA1

MOSFET 2N-CH 1200V 85A AG-EASY2B

Infineon Technologies

24
Datasheet EasyPACK™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 85A (Tj) 12mOhm @ 100A, 18V 5.15V @ 40mA 297nC @ 18V 8800pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY2B
CBB032M12FM3T Wolfspeed, Inc.

CBB032M12FM3T

MOSFET 4N-CH 1200V 39A

Wolfspeed, Inc.

22
Datasheet - Module Box Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 39A (Tj) 44mOhm @ 30A, 15V 3.9V @ 11mA 118nC @ 15V 3500pF @ 1000V - -40°C ~ 150°C (TJ) - - Chassis Mount -
FS13MR12W2M1HB70BPSA1 Infineon Technologies

FS13MR12W2M1HB70BPSA1

MOSFET 6N-CH 1200V 62.5A

Infineon Technologies

15
Datasheet CoolSiC™ - Tray Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 62.5A (Tc) 11.7mOhm @ 62.5A, 18V 5.15V @ 28mA 200nC @ 18V 6050pF @ 800V - - - - - -
FF6MR12KM1HHPSA1 Infineon Technologies

FF6MR12KM1HHPSA1

MOSFET

Infineon Technologies

10
Datasheet - - Tray Active - - - - - - - - - - - - - - -
CAB006A12GM3 Wolfspeed, Inc.

CAB006A12GM3

MOSFET 2N-CH 1200V 200A

Wolfspeed, Inc.

10
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 200A (Tj) 6.9mOhm @ 200A, 15V 3.6V @ 69mA 708nC @ 15V 20400pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
MSCSM170HM23CT3AG Microchip Technology

MSCSM170HM23CT3AG

MOSFET 4N-CH 1700V 124A

Microchip Technology

2
Datasheet - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1700V (1.7kV) 124A (Tc) 22.5mOhm @ 60A, 20V 3.2V @ 5mA 356nC @ 20V 6600pF @ 1000V 602W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
BSM300D12P2E001 Rohm Semiconductor

BSM300D12P2E001

MOSFET 2N-CH 1200V 300A MODULE

Rohm Semiconductor

11
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 300A (Tc) - 4V @ 68mA - 35000pF @ 10V 1875W -40°C ~ 150°C (TJ) - - Chassis Mount Module
NVVR26A120M1WSB onsemi

NVVR26A120M1WSB

MOSFET 2N-CH 1200V AHPM15-CDE

onsemi

10
Datasheet - 15-PowerDIP Module (2.441", 62.00mm) Tube Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 400A (Tj) 2.6mOhm @ 400A, 20V 3.2V @ 150mA 1.75µC @ 20V 31700pF @ 800V 1kW (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole AHPM15-CDE
NVVR26A120M1WSS onsemi

NVVR26A120M1WSS

MOSFET 2N-CH 1200V AHPM15-CDI

onsemi

9
Datasheet - 15-PowerDIP Module (2.441", 62.00mm) Tube Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 400A (Tj) 2.6mOhm @ 400A, 20V 3.2V @ 150mA 1.75µC @ 20V 31700pF @ 800V 1kW (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole AHPM15-CDI
CAB530M12BM3 Wolfspeed, Inc.

CAB530M12BM3

MOSFET 2N-CH 1200V 530A MODULE

Wolfspeed, Inc.

4
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 530A 3.55mOhm @ 530A, 15V 3.6V @ 140mA 1362nC @ 4V 39600pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
WAB400M12BM3 Wolfspeed, Inc.

WAB400M12BM3

MOSFET 2N-CH 1200V 468A MODULE

Wolfspeed, Inc.

21
Datasheet - Module Bulk Last Time Buy Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 468A (Tc) 4.25mOhm @ 400A, 15V 3.6V @ 106mA 1040nC @ 15V 29700pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
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FAQ

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What are FET, MOSFET Arrays components used for?

FET, MOSFET Arrays components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

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